Single chamber magnetron sputtering system

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Single chamber magnetron sputtering system is used for the preparation of novel thin film materials such as nanometer single-layer and multi-layer functional film, hard film, metal film, semiconductor film and dielectric film. It can be widely used in the research of thin film materials and the production of small batch. It can be widely used in universities and colleges, scientific research institutes of thin film materials preparation research and small batch.

Single chamber magnetron sputtering system specifications:

Vacuum chamber		Circular type vacuum chamber,size: dia. 450×350mm
Vacuum system configuration		Compound molecular pump, mechanical pump, gate valve
ultimate pressure		≦6.67*10-5Pa(After baking degassing)
Vacuum recovery time		Up to 6. 6*10-4Pa in 40 minutes. (the system briefly exposes the atmosphere and fills with dry nitrogen to start pumping)
Magnetron target component		3 sets of permanent magnetic targets; target size dia. 60mm (one of the targets can sputtering ferromagnetic material). The RF beach and DC cutoff of each target are compatible; and the distance between target and sample is adjustable from 90mm to 100mm; when direct upward sputtering, the distance between target and sample is adjustable from 40mm to 80mm.
Water-cooling Substrate Heating Revolution Table	Substrate Structure	The substrate heating and water cooling work independently, and the heating furnace can be replaced by water cooling substrates
	Sample size	Dia. 30mm
	Mode of motion	The substrate can rotate continuously, and the rotation speed is 5-10 RPM
	Heating	Max. Temperature 600℃±1℃
	Substrate Negative Bias	-200V
Gas channel system		2-channel Mass Flow Controller (MFC)
Optional parts 6 station base plate heating revolution table		Removing the single substrate, The water heating platform can be replaced on the rotary table. 6 sheets of 30mm substrates can be placed simultaneously; Among the six stations, one of them is installed with heating furnace, while the rest are natural cooling substrates. Maximum temperature of substrate heating: 600℃±1℃
Computer Control System		Control sample rotation, baffle switch, target identification, etc.
Floor Occupied	Main machine	1300×800mm2
	Electrical Cabinet	700×700mm2

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